Basic
| Form factor | M.2 2280 |
| Memory size | 4 ТБ |
| Type of memory cells | V-NAND TLC |
| Interface | PCIe 5.0 x4 |
| NVME | Support for NVMe protocol |
| Controller | Samsung in-house Controller |
| Reading speed | 14800 |
| Recording speed | 13400 |
| Recording resource (TBW) | 2400 |
Additionally
| Time -leaning time for refusal | 1.5 million hours |
| Shock resistance | 1500 |
| Power consumption | 8.2 ср |
| Working temperature | От 0 до 70 |
| Additionally |
NVMe 2.0 Cache memory - Samsung 4GB Low Power DDR4X SDRAM TRIM support S.M.A.R.T. support Automatic garbage collection algorithm 256-bit AES encryption (class 0) TCG/Opal IEEE1667 (encrypted disk) Device sleep mode support Random read - 2,200,000 IOPS Random write - 2,600,000 IOPS |
| Dimensions | 80.15 x 25 x 8.88 |
| The weight | 30 |
| SSD status | New |
| Equipment |
SSD Drive Heat Sink |
Question about SSD Drive Samsung 9100 PRO V-NAND TLC 4TB with Heatsink M.2 (2280 PCI-E) NVMe 2.0 (MZ-VAP4T0CW)
💎 Как часто выбирают товар?
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